FIXED CHARGE IN CR-METALLIZED MOS CAPACITORS. = CHARGE FIXEE DANS DES CONDENSATEURS MOS METALLISES AVEC CRLEWICKI G.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1552-1559; BIBL. 12 REF.Article

EXPERIMENTAL OBSERVATIONS OF THE EFFECTS OF OXIDE CHARGE INHOMOGENEITY ON FAST SURFACE STATE DENSITY FROM HIGH-FREQUENCY MOS CAPACITANCE-VOLTAGE CHARACTERISTICS.MCNUTT MJ; SAH CT.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 7; PP. 378-380; BIBL. 9 REF.Article

STABILITY OF MOS CAPACITORS PREPARED FROM OXIDE GROWN IN O₂-HCL GAS.RAI BP; SINGH K; SRIVASTAVA RS et al.1975; J. PHYS. E; G.B.; DA. 1975; VOL. 8; NO 8; PP. 628-629; BIBL. 6 REF.Article

INFLUENCE DES PROCESSUS TUNNEL DE GENERATION SUR LA RELAXATION DE LA CAPACITE DES STRUCTURES MDSV'YUKOV LA; SURIS RA.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 10; PP. 1768-1773; BIBL. 11 REF.Article

EXACT CAPACITANCE OF A LOSSLESS MOS CAPACITOR.MCNUTT MJ; SAH CT.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 3; PP. 255-257; BIBL. 14 REF.Article

HYDROGEN-SENSITIVE PALLADIUM GATE MOS CAPACITORS.STEELE MC; HILE JW; MACLVER BA et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 6; PP. 2537-2538; BIBL. 4 REF.Article

EFFECT OF LIFETIME ON SOS CAPACITANCE MEASUREMENTSHAMMER S; FARRINGTON D; LEVIS M et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 7; PP. 187-189; BIBL. 3 REF.Article

COMPARISON OF INTERFACE-STATE GENERATION BY 25-KEV ELECTRON BEAM IRRADIATION IN P-TYPE AND N-TYPE MOS CAPACITORS.MA TP; SCOGGAN G; LEONE R et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 2; PP. 61-63; BIBL. 11 REF.Article

MINORITY-CARRIER INJECTION AND TRANSIENT RESPONSE OF A MOS CAPACITOR.WHELAN MV.1975; PHILIPS RES. REP.; NETHERL.; DA. 1975; VOL. 30; NO 4; PP. 262-264; BIBL. 3 REF.Article

EFFECTS OF IONIZING RADIATION ON THIN-OXIDE (20-1500 A) MOS CAPACITORS.SHARE S; EPSTEIN AS; KUMAR V et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 11; PP. 4894-4898; BIBL. 11 REF.Article

ELECTRON TUNNELING IN SI-SIO₂-AL STRUCTURES: A COMPARISON BETWEEN <100> ORIENTED AND <111> ORIENTED SIKRIEGER G; SWANSON RM.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 10; PP. 818-819; BIBL. 4 REF.Article

DETERMINATION OF SI-METAL WORK FUNCTION DIFFERENCES BY MOS CAPACITANCE TECHNIQUE.KAR S.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 2; PP. 169-181; BIBL. 21 REF.Article

CARACTERISTIQUE CAPACITE-TENSION D'UNE CERAMIQUE COMPOSITE BATIO₃-BI₂O₃ DOPEE AU LA AVEC UNE COUCHE BARRIERE DE SURFACEKUWABARA M; YANAGIDA H.1973; J. CERAM. SOC. JAP.; JAP.; DA. 1973; VOL. 81; NO 8; PP. 334-339; ABS. ANGL.; BIBL. 15 REF.Article

EFFECTS OF SURFACE STATES ON RELAXATION PHENOMENA IN MOS CAPACITORS.CALZOLARI PU; GRAFFI S; PIERINI G et al.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 4; PP. 325-330; BIBL. 20 REF.Article

A LINEAR TWO-LAYER MODEL FOR FLAT-BAND SHIFT IN IRRADIATED MOS DEVICES.CHURCHILL JN; HOLMSTROM FE; COLLINS TW et al.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 4; PP. 291-296; BIBL. 8 REF.Article

A NEW VOLTAGE-TUNABLE DISTRIBUTED RC NOTCH FILTER SUITABLE FOR SOS REALIZATION.WONG PHK; YOUNG L.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 4; PP. 523-524; BIBL. 6 REF.Article

BIAS-TEMPERATURE TREATMENT ON MOS CAPACITORS IRRADIATED WITH 1 MEV ELECTRONS.SAMINADAYAR K; PFISTER JC.1973; RAD. EFFECTS; G.B.; DA. 1973; VOL. 20; NO 1-2; PP. 55-64; BIBL. 14 REF.Article

ORIGIN OF HIGH-FREQUENCY DISPERSION OF G_P/OMEGA OF METAL-OXIDE SEMICONDUCTOR CAPACITORSKNOLL M; FAHRNER WR.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 4; PP. 3071-3072; BIBL. 7 REF.Article

RAPID AND PRECISE MEASUREMENT OF FLATBAND VOLTAGE.LI SP; RYAN M; BATES ET et al.1976; REV. SCI. INSTRUM.; U.S.A.; DA. 1976; VOL. 47; NO 5; PP. 632-634; BIBL. 1 REF.Article

INVERSION CHARGE REDISTRIBUTION MODEL OF THE HIGH-FREQUENCY MOS CAPACITANCE.BERMAN A; KERR DR.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 735-742; BIBL. 19 REF.Article

A bias voltage dependence of trapped hole annealing and its measurement techniqueKUBOYAMA, S; GOKA, T; TAMURA, T et al.IEEE transactions on nuclear science. 1991, Vol 38, Num 6, pp 1140-1144, issn 0018-9499, 1Conference Paper

Instabilitäten und Durchbruch von Polycid-SiO₂-Si-Strukturen = Instability, breakdown, polysilicium, silicide MOS capacityMARKGRAF, W; HOFMANN, H.-P; BEYER, A et al.Wissenschaftliche Zeitschrift der Technischen Universität Karl-Marx-Stadt. 1989, Vol 31, Num 4, pp 585-594, issn 0863-0615, 10 p.Article

Temperature dependent analysis of the pulsed MOS capacitor for semiconductor material characterizationRADZIMSKI, Z; GAYLORD, E; HONEYCUTT, J et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 10, pp 2597-2601, issn 0013-4651Article

Effect of low pressure corona discharge on MOS characteristicsILA PRASAD; SRIVASTAVA, R. S.Indian journal of pure & applied physics. 1990, Vol 28, Num 5, pp 284-286, issn 0019-5596Article

MINIMUM VALUE OF THE LOW-FREQUENCY SPACE-CHARGE CAPACITANCE OF MOS STRUCTURESKOKKAS AG.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 3; PP. 249-251; BIBL. 11 REF.Article